Title :
A low quiescent current 3.3V operation linear MMIC power amplifier for 5 GHz WLAN applications
Author :
Kim, Ji H. ; Kim, Ji H. ; Noh, Y.S. ; Park, C.S.
Author_Institution :
Sch. of Eng., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
We report a 5 GHz linear InGaP/GaAs HBT monolithic microwave integrated circuit (MMIC) power amplifier for wireless LAN applications. The three-stage power amplifier operates with 103 mA - low quiescent current of Class AB mode using active bias circuit under a single supply of +3.3V A total current of 196(194) mA is consumed with an output power of 18 dBm and PAE (power-added efficiency) of 9.7% at 5.25(5.15) GHz. The power amplifier exhibits a power gain of 19.6 (17.8/18.5) dB, 1-dB compression point (P/sub 1/dB) of 26(25/25) dBm, and PAE of 27.8(25.4/20) % at 5.25(5.15/5.85) GHz. Measured third-order IMD(intermodulation distortion) is less than -25 dBc at 3 dB back-off and less than -30 dBc at 5 dB back-off from P/sub 1/dB for the frequency range between 5.15 and 5.85 GHz.
Keywords :
III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; wireless LAN; 103 mA; 19.6 dB; 196 mA; 27.8 percent; 3.3 V; 5 GHz; 9.7 percent; InGaP-GaAs; class AB mode; intermodulation distortion; linear InGaP/GaAs HBT MMIC power amplifier; output power; power added efficiency; power gain; quiescent current; wireless LAN; Application specific integrated circuits; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Operational amplifiers; Power amplifiers; Wireless LAN;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212507
