A 5 GHz high efficiency and low distortion InGaP/GaAs HBT power amplifier MMIC

Author

Fujita, K. ; Shirakawa, K. ; Takahashi, N. ; Liu, Y. ; Oka, T. ; Yamashita, M. ; Sakuno, K. ; Kawamura, H. ; Hasegawa, M. ; Koh, H. ; Kagoshima, K. ; Kijima, H. ; Sato, H.

Author_Institution

Adv. Technol. Res. Labs., Sharp Corp., Nara, Japan

Volume

2

fYear

2003

Firstpage

871

Abstract

An InGaP/GaAs two-stage HBT power amplifier for 5 GHz Wireless-LAN applications was developed. By using a self-aligned base contact formation process and an external base region side etching process, a high gain HBT was realized. A small-sized via hole fabrication process was developed. The gain of multi-finger HBT was improved by locating via holes between each finger. Linearity was also improved by developing a new variable negative feedback circuit. A power amplifier MMIC utilizing this technology was fabricated, and 19.7 dBm output power, 22 dB gain, 22.5% power-added-efficiency (PAE), 5.0% error vector magnitude (EVM) were obtained at 54 Mbps transmission under a supply voltage of 3.3 V. These state of the art data represent the highest PAE reported for a the power amplifier MMIC in the 5 GHz Wireless-LAN application.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; feedback amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 22 dB; 22.5 percent; 3.3 V; 5 GHz; 54 Mbit/s; InGaP-GaAs; InGaP/GaAs two-stage HBT power amplifier MMIC; distortion control; error vector magnitude; external base region side etching; multi-finger HBT; negative feedback circuit; output power; power added efficiency; self-aligned base contact formation; via hole fabrication; wireless LAN; Etching; Fabrication; Fingers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Linearity; MMICs; Negative feedback; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212508

Filename

1212508