• DocumentCode
    1646171
  • Title

    A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier

  • Author

    Kobayashi, Kevin W.

  • Author_Institution
    Sirenza Microdevices, Torrance, CA
  • fYear
    2006
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    This paper reports the first results of a new Darlington cascode topology implemented with 0.5mum E-mode PHEMTs. The Darlington cascode employs active self-bias and a linearizing Darlington cascode (DCAS) circuit for achieving robust bias and enhanced gain and IP3-bandwidth performance. The Darlington cascode achieves 12.5 dB gain with a 16 GHz 3-dB BW - a 60% BW improvement over the conventional Darlington. The DCAS obtains an IP3 of 29 dBm with a 13 GHz BW - an 80% improvement in IP3-BW over the conventional Darlington approach. These improvements have been obtained without significantly compromising NF, stability, or bias robustness. The new DCAS amplifier design can be applied to other semiconductor technologies and offers an approach for compacting high microwave performance into a small area without the use of distributed techniques
  • Keywords
    HEMT integrated circuits; linearisation techniques; microwave amplifiers; 0.5 micron; 12.5 dB; 13 GHz; 16 GHz; Darlington cascode amplifier; E-mode PHEMT linearized amplifier; active self-bias; high electron mobility transistor; Circuit topology; Distributed amplifiers; Microwave amplifiers; Microwave technology; Noise measurement; PHEMTs; Performance gain; Robust stability; Robustness; Semiconductor optical amplifiers; Darlington; ED PHEMT; IP3-bandwidth; cascode wideband; e-mode; self-bias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
  • Conference_Location
    San Antonio, TX
  • Print_ISBN
    1-4244-0126-7
  • Electronic_ISBN
    1-4244-0127-5
  • Type

    conf

  • DOI
    10.1109/CSICS.2006.319934
  • Filename
    4110006