DocumentCode :
1646171
Title :
A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier
Author :
Kobayashi, Kevin W.
Author_Institution :
Sirenza Microdevices, Torrance, CA
fYear :
2006
Firstpage :
153
Lastpage :
156
Abstract :
This paper reports the first results of a new Darlington cascode topology implemented with 0.5mum E-mode PHEMTs. The Darlington cascode employs active self-bias and a linearizing Darlington cascode (DCAS) circuit for achieving robust bias and enhanced gain and IP3-bandwidth performance. The Darlington cascode achieves 12.5 dB gain with a 16 GHz 3-dB BW - a 60% BW improvement over the conventional Darlington. The DCAS obtains an IP3 of 29 dBm with a 13 GHz BW - an 80% improvement in IP3-BW over the conventional Darlington approach. These improvements have been obtained without significantly compromising NF, stability, or bias robustness. The new DCAS amplifier design can be applied to other semiconductor technologies and offers an approach for compacting high microwave performance into a small area without the use of distributed techniques
Keywords :
HEMT integrated circuits; linearisation techniques; microwave amplifiers; 0.5 micron; 12.5 dB; 13 GHz; 16 GHz; Darlington cascode amplifier; E-mode PHEMT linearized amplifier; active self-bias; high electron mobility transistor; Circuit topology; Distributed amplifiers; Microwave amplifiers; Microwave technology; Noise measurement; PHEMTs; Performance gain; Robust stability; Robustness; Semiconductor optical amplifiers; Darlington; ED PHEMT; IP3-bandwidth; cascode wideband; e-mode; self-bias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
Type :
conf
DOI :
10.1109/CSICS.2006.319934
Filename :
4110006
Link To Document :
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