DocumentCode
1646171
Title
A Novel E-mode PHEMT Linearized Darlington Cascode Amplifier
Author
Kobayashi, Kevin W.
Author_Institution
Sirenza Microdevices, Torrance, CA
fYear
2006
Firstpage
153
Lastpage
156
Abstract
This paper reports the first results of a new Darlington cascode topology implemented with 0.5mum E-mode PHEMTs. The Darlington cascode employs active self-bias and a linearizing Darlington cascode (DCAS) circuit for achieving robust bias and enhanced gain and IP3-bandwidth performance. The Darlington cascode achieves 12.5 dB gain with a 16 GHz 3-dB BW - a 60% BW improvement over the conventional Darlington. The DCAS obtains an IP3 of 29 dBm with a 13 GHz BW - an 80% improvement in IP3-BW over the conventional Darlington approach. These improvements have been obtained without significantly compromising NF, stability, or bias robustness. The new DCAS amplifier design can be applied to other semiconductor technologies and offers an approach for compacting high microwave performance into a small area without the use of distributed techniques
Keywords
HEMT integrated circuits; linearisation techniques; microwave amplifiers; 0.5 micron; 12.5 dB; 13 GHz; 16 GHz; Darlington cascode amplifier; E-mode PHEMT linearized amplifier; active self-bias; high electron mobility transistor; Circuit topology; Distributed amplifiers; Microwave amplifiers; Microwave technology; Noise measurement; PHEMTs; Performance gain; Robust stability; Robustness; Semiconductor optical amplifiers; Darlington; ED PHEMT; IP3-bandwidth; cascode wideband; e-mode; self-bias;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location
San Antonio, TX
Print_ISBN
1-4244-0126-7
Electronic_ISBN
1-4244-0127-5
Type
conf
DOI
10.1109/CSICS.2006.319934
Filename
4110006
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