A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications

Author

Oka, Tohru ; Hasegawa, Masatomo ; Hirata, Michitoshi ; Amano, Yoshihisa ; Ishimaru, Yoshiteru ; Kawamura, Hiroshi ; Sakuno, Keiichi

Author_Institution

Adv. Technol. Res. Labs., Sharp Corp., Nara

fYear

2006

Firstpage

157

Lastpage

160

Abstract

This paper describes a 5-6 GHz band GaAs HBT power amplifier operating at 3.3 V for broadband wireless applications. In conjunction with linearizing circuit techniques, wideband matching circuits including trap circuits for 2nd harmonics allow us to achieve the high linear output power and the low distortion together with low 2nd-harmonic spurious outputs. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mbps 64-QAM-OFDM signals. The 2nd harmonic spurious outputs below -35 dBc were also attained

Keywords

III-V semiconductors; bipolar integrated circuits; gallium arsenide; linearisation techniques; microwave power amplifiers; 2nd-harmonic spurious outputs; 3.3 V; 5 to 6 GHz; GaAs; broadband wireless applications; heterojunction bipolar transistor; high-power low-distortion HBT power amplifier; linearizing circuit techniques; trap circuits; wideband matching circuits; Broadband amplifiers; Circuits; Gallium arsenide; Harmonic distortion; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Power system harmonics; Wideband; HBT; broadband wireless application; harmonics; linear; power amplifier; trap circuit;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319935

Filename

4110007