New LV-BPD (low voltage buried photo-diode) for CMOS imager

Author

Inoue, I. ; Nozaki, H. ; Yamashita, H. ; Yamaguchi, T. ; Ishiwata, H. ; Ihara, H. ; Miyagawa, R. ; Miura, H. ; Nakamura, N. ; Egawa, Y. ; Matsunaga, Y.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

Firstpage

883

Lastpage

886

Abstract

We have developed a low voltage buried photodiode for CMOS imager, in order to achieve high quality reproduced images comparable to CCD imager. The new buried photodiode has been operated in complete charge transfer mode at low voltage of 33 V, and the image lag and kTC noise of the photodiode have been suppressed.

Keywords

CMOS image sensors; optical noise; photodiodes; 3.3 V; CMOS imager; complete charge transfer mode; high quality reproduced images; image lag suppression; kTC noise suppression; low voltage buried photodiode; CMOS image sensors; Charge coupled devices; Charge transfer; Fabrication; Large scale integration; Leakage current; Low voltage; Photodiodes; Power supplies; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824290

Filename

824290

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1646300