Title :
New LV-BPD (low voltage buried photo-diode) for CMOS imager
Author :
Inoue, I. ; Nozaki, H. ; Yamashita, H. ; Yamaguchi, T. ; Ishiwata, H. ; Ihara, H. ; Miyagawa, R. ; Miura, H. ; Nakamura, N. ; Egawa, Y. ; Matsunaga, Y.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
We have developed a low voltage buried photodiode for CMOS imager, in order to achieve high quality reproduced images comparable to CCD imager. The new buried photodiode has been operated in complete charge transfer mode at low voltage of 33 V, and the image lag and kTC noise of the photodiode have been suppressed.
Keywords :
CMOS image sensors; optical noise; photodiodes; 3.3 V; CMOS imager; complete charge transfer mode; high quality reproduced images; image lag suppression; kTC noise suppression; low voltage buried photodiode; CMOS image sensors; Charge coupled devices; Charge transfer; Fabrication; Large scale integration; Leakage current; Low voltage; Photodiodes; Power supplies; Semiconductor device noise;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824290
