DocumentCode
1646335
Title
Design of 60-GHz LNA in 0.13-μm SiGe BiCMOS
Author
Xu, Leijun ; Wang, Zhigong ; Xia, Jun ; Yan Zhao
Author_Institution
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing
fYear
2008
Firstpage
306
Lastpage
309
Abstract
This paper presents the design of the matching network of a 60-GHz high-gain LNA. Through analyzing commonly used structure, a simplified input matching network was designed and an inter-stage matching network was proposed to improve gain and reduce noise. Simulated in 0.13-μm SiGe BiCMOS technology, the LNA provides a gain of 20 dB with a noise figure of 5 dB while consuming 3 mA from a 2.5-V supply.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; impedance matching; low noise amplifiers; millimetre wave amplifiers; LNA; SiGe; SiGe BiCMOS technology; frequency 60 GHz; gain 20 dB; input matching network; inter-stage matching network; low noise amplifiers; noise figure 5 dB; size 0.13 mum; voltage 2.5 V; BiCMOS integrated circuits; Bipolar transistors; Circuit topology; Frequency; Germanium silicon alloys; Impedance matching; Isolation technology; Noise figure; Parasitic capacitance; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location
Nanjing
Print_ISBN
978-1-4244-1885-5
Electronic_ISBN
978-1-4244-1886-2
Type
conf
DOI
10.1109/GSMM.2008.4534630
Filename
4534630
Link To Document