Fundamental Difference of Power Handling Between CE and CB HBTs

Author

Li, Hui ; Jiang, Ningyue ; Wang, Guogong ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI

fYear

2006

Firstpage

183

Lastpage

186

Abstract

Fundamental power handling of common-emitter (CE) and common-base (CB) (SiGe) power HBTs is compared by measuring their dynamic load lines under large-signal operation with input and output matched for maximum output power (P_out). The distinct difference of load lines indicates the fundamental different power amplification mechanisms between the two configurations. It is shown that under voltage-source bias the CE configuration always provides higher (saturated) output power (P_out) than the CB configuration, while higher power gain and power added efficiency (PAE) could be obtained from the CB configuration than the CE configuration before entering the power saturation region

Keywords

Ge-Si alloys; heterojunction bipolar transistors; microwave power amplifiers; power bipolar transistors; SiGe; common-base power HBT; common-emitter power HBT; dynamic load lines; large-signal operation; power amplification; power handling; voltage-source bias; Drives; Electric variables measurement; Fingers; Frequency; Germanium silicon alloys; Impedance matching; Power engineering and energy; Power generation; Power measurement; Silicon germanium; Common-base (CB); HBT; SiGe; common-emitter (CE); dynamic loadline; power amplification; power handling;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319892

Filename

4110014