Title :
A 5.25GHz 0.35um SiGe BiCMOS Power Amplifier for IEEE 802.11a Wireless LAN
Author :
Xiao-Lin ; Li, Wen-Yuan ; Wang, Zhi-Gong
Author_Institution :
Inst. of RF- & OE-ICs, Southeast Univ., Nanjing
Abstract :
A 5.25 GHz linear power amplifier for Wireless LAN application has been realized in 0.35 mum SiGe BiCMOS technology. This paper presents a two-stage power amplifier operating at AB mode under a single supply of +3.3 v. A current mirror bias circuit is integrated to improve the linearity, efficiency, gain of the power amplifier. The result of simulation shows that the output 1 dB compression point (OP1 dB) is 26.3 dBm, the saturated output power achieves 28.5 dBm, the power added efficiency (PAE) at OP1 dB is about 20%, and the small signal gain is 28.3 dB at 3.3 v supply voltage.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; IEEE standards; current mirrors; microwave power amplifiers; wireless LAN; AB mode; BiCMOS power amplifier; BiCMOS technology; IEEE 802.11a wireless LAN; SiGe; current mirror bias circuit; frequency 5.25 GHz; gain 28.3 dB; linear power amplifier; size 0.35 mum; two-stage power amplifier; voltage 3.3 V; BiCMOS integrated circuits; Circuit simulation; Germanium silicon alloys; Integrated circuit technology; Linearity; Mirrors; Power amplifiers; Power generation; Silicon germanium; Wireless LAN; PAE; SiGe BICMOS; WLAN; power amplifier;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534631
