Title :
X- and Ku-band internally matched GaN amplifiers with more than 100W output power
Author :
Noto, H. ; Maehara, Hiroaki ; Uchida, Hironaga ; Koyanagi, Mitsumasa ; Utsumi, Hiroaki ; Nishihara, J. ; Otsuka, Hiroyuki ; Yamanaka, Keiji ; Nakayama, Makoto ; Hirano, Yoshikuni
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.
Keywords :
III-V semiconductors; electronics packaging; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; GaN; Ku-band internally matched amplifiers; RF module size; X-band internally matched amplifiers; internally matched-HEMT high power amplifiers; single solid state device; transistor power bars; Gallium nitride; HEMTs; MODFETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
