Title :
GOI properties of W-polycide formed by DCS processing
Author :
Lee, Cheol-In ; Choi, Hyun-Sik ; Kwon, Ho-Young ; Kim, Chang-II ; Chang, Eui-Goo
Author_Institution :
Chungang Univ., Seoul, South Korea
Abstract :
GOI properties formed by tungsten silicide (WSix) deposited by LPCVD employing dichlorosilane (SiH2Cl2, DCS) and monosilane (SiH4, MS) reduction of tungsten hexafluoride (WF 6) has been studied. The sheet resistivity of as-deposited MS-WSix higher than that of the DCS-WSix, and after annealing both of it drop drastically but it is lower in MS-WSix than DCS-WSix. These result was confirmed by TEM analysis which indicates that the behavior of resistivity is due to grain growth rate and rather correlated with the formation of hexagonal phase of WSix. It was revealed that time-to-breakdown of DCS-WSix, where the current density was 100 mA/cm 2, was about three times longer than MS-WSix. It was also observed that DCS-WSix film shows better step coverage
Keywords :
CVD coatings; annealing; electrical resistivity; grain growth; metallisation; transmission electron microscopy; tungsten compounds; DCS processing; GOI; LPCVD; TEM; WSi; WSix film; annealing; current density; dichlorosilane; grain growth; monosilane; reduction; sheet resistivity; step coverage; time-to-breakdown; tungsten hexafluoride; tungsten polycide; Annealing; Conductivity; Crystallization; Degradation; Distributed control; Educational institutions; Grain size; Semiconductor films; Silicides; Tungsten;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.617604
