A new sensor structure and fabrication process for a single-chip fingerprint sensor/identifier LSI

Author

Machida, K. ; Shigematsu, S. ; Morimura, H. ; Shimoyama, N. ; Tanabe, Y. ; Kumazaki, T. ; Kudou, K. ; Yano, M. ; Kyuragi, H.

Author_Institution

NTT Telecommun. Energy Labs., Kanagawa, Japan

fYear

1999

Firstpage

887

Lastpage

890

Abstract

We propose a new sensor structure and the fabrication process for a single-chip fingerprint sensor/identifier LSI in which the sensor is stacked on a 0.5 /spl mu/m CMOS LSI. We investigate the influence of electrostatic discharge (ESD), mechanical stress, and water penetration on the sensor´s reliability. The results reveal ESD tolerance is obtained at the value of 2.0 kV, the sensor is immune to mechanical stress under the condition of 1 MPa tapping tests, and it is protected against contamination by a passivation film. The tests confirm that the sensor has sufficient reliability for conventional identification usage.

Keywords

CMOS image sensors; electrostatic discharge; fingerprint identification; integrated circuit technology; large scale integration; passivation; reliability; 0.5 /spl mu/m CMOS LSI; 0.5 mum; 2 kV; ESD tolerance; contamination; electrostatic discharge; fabrication process; identification usage; mechanical stress; passivation film; reliability; sensor reliability; sensor structure; single-chip fingerprint identifier LSI; single-chip fingerprint sensor; tapping tests; water penetration; CMOS process; Electrostatic discharge; Fabrication; Fingerprint recognition; Large scale integration; Mechanical sensors; Protection; Stress; Testing; Water pollution;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824291

Filename

824291