Title :
Ultra low capacitance measurements in multilevel metallisation CMOS by using a built-in electron-meter
Author :
Froment, B. ; Paillardet, F. ; Bely, M. ; Cluzel, J. ; Granger, E. ; Haond, M. ; Dugoujon, L.
Author_Institution :
Centre Commun. CNET/ST Microelectron., Crolles, France
Abstract :
In this paper a new interconnect capacitance measurement method with a sub-attoFarad (<10/sup -18/ F) resolution is presented. We have developed a SPD (Single Pattern Driver) which allows to obtain directly all the coupling terms for a system of several interconnect electrodes. A very good fit is obtained between measurements and simulation for a state-of-the-art 0.18 /spl mu/m CMOS process with low-k. Moreover, we demonstrate that this SPD can be used for process characterisation and monitoring, and extraction tool validation.
Keywords :
CMOS integrated circuits; capacitance measurement; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; 0.18 micron; CMOS interconnect; built-in electron meter; capacitance measurement; multilevel metallisation; single pattern driver; Capacitance measurement; Capacitors; Coupling circuits; Driver circuits; Electrodes; Electrons; Integrated circuit interconnections; Metallization; Microelectronics; Parasitic capacitance;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824293
