Characterization of crosstalk-induced noise for 0.18 /spl mu/m CMOS technology with 6-level metallization using time domain reflectometry and S-parameters

Author

Hi-Deok Lee ; Myoung-Jun Jang ; Dae-Gwan Kang ; Jeong-Mo Hwang ; Yong-Joo Kim ; Oh-Kyong Kwon ; Dae-Mann Kim

Author_Institution

R&D Div., Hyundai MicroElectron., Choongbuk, South Korea

fYear

1999

Firstpage

905

Lastpage

908

Abstract

Crosstalk-induced noise of 0.18 /spl mu/m CMOS Technology is characterized using time domain reflectometry and scattering parameters. The interconnect lines are quantitatively modeled in RF range, whose accuracy was verified with the use of TDR data and its comparison with HSPICE simulation. The modeled interconnect line is used to simulate comprehensively crosstalk-induced noise voltage in various real routing environments using HSPICE. The crosstalk voltage exhibited a strong dependence on line width rather than line space.

Keywords

CMOS integrated circuits; S-parameters; SPICE; crosstalk; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; time-domain reflectometry; 0.18 micron; CMOS technology; HSPICE simulation; RF IC; crosstalk-induced noise; interconnect line; multilevel metallization; scattering parameters; time domain reflectometry; CMOS technology; Crosstalk; Data mining; Integrated circuit interconnections; Metallization; Radio frequency; Reflectometry; Routing; Scattering parameters; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824295

Filename

824295