Title :
Characterization of crosstalk-induced noise for 0.18 /spl mu/m CMOS technology with 6-level metallization using time domain reflectometry and S-parameters
Author :
Hi-Deok Lee ; Myoung-Jun Jang ; Dae-Gwan Kang ; Jeong-Mo Hwang ; Yong-Joo Kim ; Oh-Kyong Kwon ; Dae-Mann Kim
Author_Institution :
R&D Div., Hyundai MicroElectron., Choongbuk, South Korea
Abstract :
Crosstalk-induced noise of 0.18 /spl mu/m CMOS Technology is characterized using time domain reflectometry and scattering parameters. The interconnect lines are quantitatively modeled in RF range, whose accuracy was verified with the use of TDR data and its comparison with HSPICE simulation. The modeled interconnect line is used to simulate comprehensively crosstalk-induced noise voltage in various real routing environments using HSPICE. The crosstalk voltage exhibited a strong dependence on line width rather than line space.
Keywords :
CMOS integrated circuits; S-parameters; SPICE; crosstalk; integrated circuit interconnections; integrated circuit metallisation; integrated circuit noise; time-domain reflectometry; 0.18 micron; CMOS technology; HSPICE simulation; RF IC; crosstalk-induced noise; interconnect line; multilevel metallization; scattering parameters; time domain reflectometry; CMOS technology; Crosstalk; Data mining; Integrated circuit interconnections; Metallization; Radio frequency; Reflectometry; Routing; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824295
