DocumentCode
1646494
Title
A 0.1 - 50 GHz SiGe HBT distributed amplifier employing constant-k m-derived sections
Author
Aguirre, J. ; Plett, C.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Volume
2
fYear
2003
Firstpage
923
Abstract
This paper describes a single-ended three-stage SiGe HBT distributed amplifier employing constant-k, m-derived filter sections in the output artificial transmission line. The distributed amplifier exhibits a measured passband of 100 MHz to 50 GHz, has a small die size (1.0 /spl times/ 1.1 mm/sup 2/) and low power consumption (125 mW). This amplifier is suitable for use in communication systems.
Keywords
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; distributed amplifiers; heterojunction bipolar transistors; low-power electronics; semiconductor materials; wideband amplifiers; 0.1 to 50 GHz; 125 mW; HBT; SiGe; communication systems; constant-k m-derived sections; die size; distributed amplifier; output artificial transmission line; passband; power consumption; single-ended three-stage amplifier; Distributed amplifiers; Filters; Germanium silicon alloys; Heterojunction bipolar transistors; Passband; Power measurement; Power transmission lines; Silicon germanium; Size measurement; Transmission line measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location
Philadelphia, PA, USA
ISSN
0149-645X
Print_ISBN
0-7803-7695-1
Type
conf
DOI
10.1109/MWSYM.2003.1212520
Filename
1212520
Link To Document