Title :
A Direct Tunneling Memory (DTM) utilizing novel floating gate structure
Author :
Horiguchi, N. ; Usuki, T. ; Goto, K. ; Futatsugi, T. ; Sugii, T. ; Yokoyama, N.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A novel floating gate (FG) memory, Direct Tunneling Memory (DTM) is demonstrated. The main features of DTM are an ultra-thin tunnel oxide with leakage stop barrier and sidewall control gate (CG) which prevent the overlap between a FG and source/drain (SD) extensions. This structure suppresses the gate leakage current and improves the retention time while high speed write/erase operations with low voltage can be achieved due to the ultra-thin tunnel oxide.
Keywords :
semiconductor storage; tunnelling; direct tunneling memory; floating gate structure; gate leakage current; leakage stop barrier; low-voltage high-speed operation; retention time; sidewall control gate; source/drain extension; ultrathin tunnel oxide; Capacitors; Character generation; Flash memory; Laboratories; Leakage current; Low voltage; MOSFET circuits; Nonvolatile memory; Random access memory; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824299
