Title :
Frequency- and amplitude-tunable X-to-Ku band SiGe ring oscillators for multiband BIST applications
Author :
Shankar, Subramaniam ; Horst, Stephen ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Tech, Atlanta, GA, USA
Abstract :
An 8-17 GHz SiGe ring oscillator covering the X- and Ku-bands for built-in-self-test of multiband system-on-chip solutions is demonstrated. The oscillator features highly linear frequency control over the bandwidth, with 72% tuning range in a small form factor of 0.652 mm2. To the author´s knowledge, this is the widest tuning range/smallest form factor combination achieved by a ring oscillator that spans both X and Ku bands. A second ring oscillator with band selectivity and output power control is also presented, covering the 9-11 GHz and 17-21 GHz bands. This second oscillator features an ultra-small form factor of only 0.036 mm2. Both oscillator designs are based on a 3.3 V supply and were implemented in a commercially-available 180 nm SiGe BiCMOS platform.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; built-in self test; microwave integrated circuits; microwave oscillators; system-on-chip; BiCMOS platform; SOC; SiGe; amplitude-tunable X-to-Ku band ring oscillators; band selectivity; built-in-self-test; frequency 17 GHz to 21 GHz; frequency 8 GHz to 17 GHz; frequency-tunable X-to-Ku band ring oscillators; multiband BIST applications; multiband system-on-chip solutions; power control; size 180 nm; voltage 3.3 V; Delay; Inductors; Power generation; Ring oscillators; Silicon germanium; Tuning;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668006
