DocumentCode
1646644
Title
Snubber circuit and MOSFET paralleling considerations for high power boost-based power-factor correctors
Author
pietkiewicz, A. ; Tollik, D.
Author_Institution
Ascom Energy Systems Ltd., Berne, Switzerland
fYear
1995
Firstpage
41
Lastpage
45
Abstract
Use of appropriate snubber circuit and paralleling of power switches are very important issues for high power boost power convertor-based power factor correctors. This paper shows that practical approach to the snubbing problem is a simple turn-on snubber with di/dt control of the diode reverse-recovery transition. Implementation of such a snubber in boost power converters with paralleled MOSFET switches is then discussed
Keywords
DC-DC power convertors; field effect transistor switches; power MOSFET; power factor correction; power field effect transistors; power semiconductor switches; snubbers; boost power converters; di/dt control; diode reverse-recovery transition; power MOSFET paralleling; power factor correctors; power switches; snubber circuit; turn-on snubber; Diodes; MOSFET circuits; Packaging; Power MOSFET; Power dissipation; Snubbers; Switches; Switching loss; Topology; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications Energy Conference, 1995. INTELEC '95., 17th International
Conference_Location
The Hague
Print_ISBN
0-7803-2750-0
Type
conf
DOI
10.1109/INTLEC.1995.498927
Filename
498927
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