DocumentCode :
1646644
Title :
Snubber circuit and MOSFET paralleling considerations for high power boost-based power-factor correctors
Author :
pietkiewicz, A. ; Tollik, D.
Author_Institution :
Ascom Energy Systems Ltd., Berne, Switzerland
fYear :
1995
Firstpage :
41
Lastpage :
45
Abstract :
Use of appropriate snubber circuit and paralleling of power switches are very important issues for high power boost power convertor-based power factor correctors. This paper shows that practical approach to the snubbing problem is a simple turn-on snubber with di/dt control of the diode reverse-recovery transition. Implementation of such a snubber in boost power converters with paralleled MOSFET switches is then discussed
Keywords :
DC-DC power convertors; field effect transistor switches; power MOSFET; power factor correction; power field effect transistors; power semiconductor switches; snubbers; boost power converters; di/dt control; diode reverse-recovery transition; power MOSFET paralleling; power factor correctors; power switches; snubber circuit; turn-on snubber; Diodes; MOSFET circuits; Packaging; Power MOSFET; Power dissipation; Snubbers; Switches; Switching loss; Topology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Telecommunications Energy Conference, 1995. INTELEC '95., 17th International
Conference_Location :
The Hague
Print_ISBN :
0-7803-2750-0
Type :
conf
DOI :
10.1109/INTLEC.1995.498927
Filename :
498927
Link To Document :
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