Title :
Ultra-low contact resistance for deca-nm MOSFETs by laser annealing
Author :
Goto, K. ; Yamamoto, T. ; Kubo, T. ; Kase, M. ; Yun Wang ; Tengshing Lin ; Talwar, S. ; Sugii, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We demonstrate an ultra-low contact resistance of 4/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ (5/spl times/ lower than RTA) using a laser annealing (LA) process. The contact resistance reduction is attributed to the high activated dopant concentration of 10/sup 21/ cm/sup -3/. For the first time, we have successfully fabricated LA-pMOSFETs with a conventional CMOS integration flow for lowering contact resistance.
Keywords :
CMOS integrated circuits; MOSFET; contact resistance; integrated circuit metallisation; laser beam annealing; CMOS integration flow; activated dopant concentration; contact resistance reduction; deca-nm MOSFETs; laser annealed pMOSFET; laser annealing; ultra-low contact resistance; Boron; CMOS technology; Contact resistance; Laboratories; MOSFETs; Optical pulses; Rapid thermal annealing; Rapid thermal processing; Solids; Temperature;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824302
