Ultra-low contact resistance for deca-nm MOSFETs by laser annealing

Author

Goto, K. ; Yamamoto, T. ; Kubo, T. ; Kase, M. ; Yun Wang ; Tengshing Lin ; Talwar, S. ; Sugii, T.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1999

Firstpage

931

Lastpage

933

Abstract

We demonstrate an ultra-low contact resistance of 4/spl times/10/sup -8/ /spl Omega/-cm/sup 2/ (5/spl times/ lower than RTA) using a laser annealing (LA) process. The contact resistance reduction is attributed to the high activated dopant concentration of 10/sup 21/ cm/sup -3/. For the first time, we have successfully fabricated LA-pMOSFETs with a conventional CMOS integration flow for lowering contact resistance.

Keywords

CMOS integrated circuits; MOSFET; contact resistance; integrated circuit metallisation; laser beam annealing; CMOS integration flow; activated dopant concentration; contact resistance reduction; deca-nm MOSFETs; laser annealed pMOSFET; laser annealing; ultra-low contact resistance; Boron; CMOS technology; Contact resistance; Laboratories; MOSFETs; Optical pulses; Rapid thermal annealing; Rapid thermal processing; Solids; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824302

Filename

824302

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1646645