• DocumentCode
    1646649
  • Title

    Impact of the non-ideal temperature dependence of IC-VBE on ultra-wide temperature range SiGe HBT bandgap reference circuits

  • Author

    Luo, Lan ; Niu, Guofu ; Najafizadeh, Laleh ; Cressler, John D.

  • Author_Institution
    ECE Dept., Auburn Univ., Auburn, AL, USA
  • fYear
    2010
  • Firstpage
    220
  • Lastpage
    223
  • Abstract
    We investigate the impact of the non-ideal temperature dependence of IC-VBE on the performance of ultra-wide temperature range SiGe HBT bandgap reference circuits. Both the slope and intercept of IC-VBE show temperature dependences that significantly differ from “ideal” Shockley theory widely used in BGR analysis and design, and are shown to have significant impact on ΔVBE(T), IC (T) and VBE(T).
  • Keywords
    Ge-Si alloys; heterojunction bipolar transistors; SiGe; bandgap reference circuits; ideal Shockley theory; non-ideal temperature dependence; ultrawide temperature range HBT; Integrated circuit modeling; Noise measurement; Silicon germanium; Temperature dependence; Temperature distribution; Temperature measurement; Bandgap reference; Non-ideality factor; PTAT; Saturation current; SiGe HBT;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-8578-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.2010.5668007
  • Filename
    5668007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1646649