Title :
Electrical properties of submicron (/spl ges/0.13 /spl mu/m/sup 2/) Ir/PZT/Ir capacitors formed on W plugs
Author :
Moise, T.S. ; Summerfelt, S.R. ; Xing, G. ; Colombo, L. ; Sakoda, T. ; Gilbert, S.R. ; Loke, A. ; Ma, S. ; Kavari, R. ; Wills, L.A. ; Hsu, T. ; Amano, J. ; Johnston, S.T. ; Vestyck, D.J. ; Russell, M.W. ; Bilodeau, S.M.
Author_Institution :
Silicon Tech. Dev., Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Summary form only given. High-density, embedded ferroelectric memory (FeRAM) has the potential to replace embedded flash, embedded DRAM, and non-cache SRAM and could be a key enabler for future system-on-a-chip applications. Despite this appeal, the evidence that ferroelectric capacitors can be scaled to the submicron regime has been limited. In this paper, we report the fabrication and electrical properties of submicron PZT capacitors formed using both planar bottom electrodes and W plug contact structures. We observe that the aggregate saturation polarization value is nearly independent of individual capacitor area in the measured range from the contact-limited size of 0.12 /spl mu/m/sup 2/ to 10/sup 4/ /spl mu/m/sup 2/. This result suggests that high-density, embedded FeRAM technology may be feasible.
Keywords :
ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; integrated memory circuits; iridium; lead compounds; random-access storage; Ir-PZT-Ir; Ir-PbZrO3TiO3-Ir; Ir/PZT/Ir capacitors; W; W plug contact structures; aggregate saturation polarization value; electrical properties; embedded ferroelectric memory; fabrication; ferroelectric RAM; ferroelectric capacitors; high-density FeRAM; planar bottom electrodes; submicron PZT capacitors; Capacitors; Contacts; Electrodes; Fabrication; Ferroelectric films; Ferroelectric materials; Nonvolatile memory; Plugs; Random access memory; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824305
