DocumentCode
1646764
Title
Self-powered CMOS impact-rate monitors for biomechanical implants
Author
Huang, Chenling ; Chakrabartty, Shantanu
Author_Institution
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI
fYear
2008
Firstpage
385
Lastpage
388
Abstract
We have previously reported a novel self-powered piezo-floating-gate sensor that can be used for long-term monitoring of strain levels in biomechanical implants. In this paper, we extend this work to monitor impact-rates (rate of change of strain levels) which is important for predicting mechanical fatigue. We augment the piezo-floating-gate sensor with a filtering and triggering circuit that activates the ionized-hot-electron-injection (IHEI) only when the impactrates exceed predetermined threshold levels. Using multiple prototypes fabricated in a 0.5-mum standard CMOS process we characterize the performance of the sensor for mismatch and for its variability under different biasing conditions. Experimental results obtained using the prototypes demonstrate that the sensor can record different impact-rate levels over a duration of 105 cycles.
Keywords
CMOS integrated circuits; biomechanics; piezoelectric devices; prosthetics; sensors; biasing; biomechanical implants; filtering circuit; impact-rate levels; ionized-hot-electron-injection; mechanical fatigue; piezo-floating-gate sensor; self-powered CMOS impact-rate monitors; size 0.5 mum; strain levels; triggering circuit; Biosensors; Capacitive sensors; Circuits; Fatigue; Filtering; Implants; Mechanical sensors; Monitoring; Prototypes; Sensor phenomena and characterization;
fLanguage
English
Publisher
ieee
Conference_Titel
Biomedical Circuits and Systems Conference, 2008. BioCAS 2008. IEEE
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4244-2878-6
Electronic_ISBN
978-1-4244-2879-3
Type
conf
DOI
10.1109/BIOCAS.2008.4696955
Filename
4696955
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