Electromagnetic-wave effects on closely packed microwave transistors using a fast time-domain simulation approach

We present a new time-domain modeling technique to study the effect of electromagnetic-wave propagation on the performance of closely packed microwave transistors. The proposed approach solves the active device model that combines the transport physics, and Maxwell´s equations on nonuniform self-adaptive grids, obtained by applying Daubechies wavelet transforms followed by thresholding. This allows forming fine and coarse grids in locations where variable solutions change rapidly and slowly, respectively. The developed technique is applied to full-wave simulate two closely packed millimeterwave transistors. Different numerical examples are presented; showing that accurate modeling of high-frequency devices should incorporate the effect of EM-wave propagation within and around the device. To our knowledge, this is the first time in literature to implement and report a wavelet-based technique for a fast full-wave physical simulation of more than one millimeter-wave transistor simultaneously.