DocumentCode :
1646902
Title :
CVD Diamond - The Next Generation Electronic Material
Author :
Kohn, Erhard ; Denisenko, Andrej
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ.
fYear :
2006
Firstpage :
247
Lastpage :
252
Abstract :
The status of diamond electronic device structures for high power, high temperature and high frequency is reviewed and latest data are highlighted. First results on the operation in harsh environment and very high temperature suggest that besides the power handling capability, the stability, robustness and reliability may be superior to that of all other semiconductors
Keywords :
chemical vapour deposition; diamond; semiconductor materials; CVD diamond; diamond electronic device structures; electronic material; power handling capability; Boron; Cutoff frequency; Doping; Electric breakdown; FETs; Plasma temperature; Robust stability; Schottky diodes; Substrates; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
Type :
conf
DOI :
10.1109/CSICS.2006.319946
Filename :
4110033
Link To Document :
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