DocumentCode
1646902
Title
CVD Diamond - The Next Generation Electronic Material
Author
Kohn, Erhard ; Denisenko, Andrej
Author_Institution
Dept. of Electron Devices & Circuits, Ulm Univ.
fYear
2006
Firstpage
247
Lastpage
252
Abstract
The status of diamond electronic device structures for high power, high temperature and high frequency is reviewed and latest data are highlighted. First results on the operation in harsh environment and very high temperature suggest that besides the power handling capability, the stability, robustness and reliability may be superior to that of all other semiconductors
Keywords
chemical vapour deposition; diamond; semiconductor materials; CVD diamond; diamond electronic device structures; electronic material; power handling capability; Boron; Cutoff frequency; Doping; Electric breakdown; FETs; Plasma temperature; Robust stability; Schottky diodes; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location
San Antonio, TX
Print_ISBN
1-4244-0126-7
Electronic_ISBN
1-4244-0127-5
Type
conf
DOI
10.1109/CSICS.2006.319946
Filename
4110033
Link To Document