Title :
Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance
Author :
Al-Sa´di, M. ; Fregonese, S. ; Maneux, C. ; Zimmer, T.
Author_Institution :
Lab. de l´´Integration du Materiau au Syst. (IMS), Univ. de Bordeaux, Talence, France
Abstract :
The impact of utilizing silicon oxide (SiO2) strain layer on NPN-SiGe-HBT device´s electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO2 strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO2 strain layer in the collector region exhibit better high frequency characteristics in comparison with an equivalent conventional HBT device. An approximately, 14% of improvement in fT, and 9% of improvement in fMAX have been achieved. Despite the very small decrease in the break down voltage (BVCE0) value (~1%), the fT ×BVCE0 product enhancement is about 12% by means of strain engineering.
Keywords :
Ge-Si alloys; frequency response; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); NPN-SiGe-HBT device structure; SiGe; SiO2; TCAD modeling; electrical performance enhancement; electrical property; frequency response; hydrodynamic model; silicon oxide; strain engineering technology; Heterojunction bipolar transistors; Mathematical model; Performance evaluation; Semiconductor process modeling; Silicon; Strain; Stress; SiGe-HBT; mobility; strain; stress;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668019
