Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance

Author

Al-Sa´di, M. ; Fregonese, S. ; Maneux, C. ; Zimmer, T.

Author_Institution

Lab. de l´´Integration du Materiau au Syst. (IMS), Univ. de Bordeaux, Talence, France

fYear

2010

Firstpage

216

Lastpage

219

Abstract

The impact of utilizing silicon oxide (SiO₂) strain layer on NPN-SiGe-HBT device´s electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO₂ strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO₂ strain layer in the collector region exhibit better high frequency characteristics in comparison with an equivalent conventional HBT device. An approximately, 14% of improvement in f_T, and 9% of improvement in f_MAX have been achieved. Despite the very small decrease in the break down voltage (BV_CE0) value (~1%), the f_T ×BV_CE0 product enhancement is about 12% by means of strain engineering.

Keywords

Ge-Si alloys; frequency response; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); NPN-SiGe-HBT device structure; SiGe; SiO₂; TCAD modeling; electrical performance enhancement; electrical property; frequency response; hydrodynamic model; silicon oxide; strain engineering technology; Heterojunction bipolar transistors; Mathematical model; Performance evaluation; Semiconductor process modeling; Silicon; Strain; Stress; SiGe-HBT; mobility; strain; stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5668019

Filename

5668019