Title :
Transmission line with integrated symmetrical 1-kV HBM DC - 100 GHz ESD protection in advanced CMOS technologies
Author :
Lim, Taegu ; Jimenez, Joaquin ; Benech, Ph ; Fournier, J.-M. ; Galy, Ph
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents for the first time an ESD solution (DC-100 GHz) able to be implemented in an I/O pad to protect RFICs in advanced CMOS technologies.
Keywords :
CMOS integrated circuits; electrostatic discharge; radiofrequency integrated circuits; transmission line theory; CMOS technology; ESD protections parasitic capacitance; RFIC; electrostatic discharge; frequency 100 GHz; integrated symmetrical HBM ESD protection; radio-frequency integrated circuit; transistor gate; transmission line; CMOS integrated circuits; Electrostatic discharges; Power transmission lines; Propagation losses; Radio frequency; Radiofrequency integrated circuits; Reflection; Electrostatic discharges (ESD); advanced CMOS technology; integrated; radio-frequency integrated circuit (RFIC); transmission lines;
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
