High-quality InAlN/GaN high electron mobility transistors on Si (111) by metalorganic chemical vapor deposition

We successfully fabricated high-quality InAlN/GaN heterostructures for high electron mobility transistors (HEMTs) on Si (111) substrate by metalorganic chemical vapor deposition (MOCVD). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have a flat surface and an abrupt heterointerface. The surface roughness evaluated from atomic force microscopy (AFM) is improved, compared with previous reports. Electron mobility of about 1,200 and over 1,800 cm²/V-s are obtained for InAlN/GaN heterostructures without and with an AlN interlayer, respectively. These mobility values are the highest ones ever reported for InAlN/GaN heterostructures grown on Si substrates