A new scalable model for spiral inductors on lossy silicon substrate

Author

Melendy, D. ; Weisshaar, A.

Author_Institution

Nat. Semicond. Corp., Santa Clara, CA, USA

Volume

2

fYear

2003

Firstpage

1007

Abstract

A new scalable, predictive model for spiral inductors on lossy silicon substrates for radio-frequency integrated circuits (RFICs) is presented. The model is based on an enhanced Partial Element Equivalent Circuit (PEEC) approach. Eddy-current losses in the substrate are efficiently modeled using a complex image approach combined with available closed-form equations for partial inductance. The model further includes the conductor skin and proximity effects through discretization of the spiral segments. The resulting enhanced PEEC model is used to predict the performance of a typical 3.5 turn, 2.0 nH octagonal spiral inductor fabricated in a heavily-doped BiCMOS process. Comparison with measurements over a 100 MHz to 10 GHz frequency range demonstrates the excellent accuracy of the new modeling approach.

Keywords

BiCMOS integrated circuits; eddy current losses; equivalent circuits; heavily doped semiconductors; inductors; integrated circuit modelling; radiofrequency integrated circuits; silicon; skin effect; substrates; 100 MHz to 10 GHz; RFICs; Si; closed-form equations; complex image approach; conductor skin; eddy-current losses; enhanced PEEC model; heavily-doped BiCMOS process; lossy Si substrates; octagonal spiral; partial element equivalent circuit; partial inductance; predictive model; proximity effects; radiofrequency ICs; scalable model; spiral inductors; Conductors; Equations; Equivalent circuits; Inductance; Inductors; Predictive models; Radiofrequency integrated circuits; Silicon; Skin; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212539

Filename

1212539