• DocumentCode
    1646998
  • Title

    Analysis of a GaAs E-D inverter chain

  • Author

    Wing, Omar

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., NY, USA
  • fYear
    1989
  • Firstpage
    1141
  • Abstract
    Analytic formulas for the noise margins and pull-up and pull-down delays due to an input pulse with finite rise and fall times (rather than a step) of a GaAs enhancement-depletion (E-D) inverter and, by extension, of an inverter chain are derived. The formulas relate the DC and speed performance of an inverter to the current-voltage characteristics of the transistors, and indirectly to the device parameters. It is shown that for an inverter chain to be self-restoring, the logical-high and logical-low levels of the output voltage cannot be arbitrarily specified, that noise margins can be improved only logarithmically as the width ratios of the transistors are adjusted, and that the pull-up and pull-down delays are, to first order, proportional to the risetime of the input
  • Keywords
    III-V semiconductors; MOS integrated circuits; gallium arsenide; integrated logic circuits; invertors; E-D inverter chain; GaAs; current-voltage characteristics; device parameters; enhancement-depletion; fall times; input pulse; inverter chain; logical-high levels; logical-low levels; noise margins; pull-down delays; pull-up delays; rise times; speed performance; width ratios; Circuit noise; Circuit simulation; Current-voltage characteristics; Delay effects; Delay estimation; Digital circuits; Gallium arsenide; MOS devices; Pulse inverters; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1989., IEEE International Symposium on
  • Conference_Location
    Portland, OR
  • Type

    conf

  • DOI
    10.1109/ISCAS.1989.100554
  • Filename
    100554