A new RF model for the accumulation-mode MOS varactor

Author

Seong-Sik Song ; Hyungcheol Shin

Author_Institution

Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea

Volume

2

fYear

2003

Firstpage

1023

Abstract

This paper presents a new RF model of an accumulation-mode MOS varactor, which is composed of the physically meaningful parameters. This model can describe the characteristics of the device with simple equations valid in all operating regions. For easy integration into common circuit simulators, a single topology with the lumped elements derived from the device structure has been proposed. With directly extracted parameters based on the Z-parameter analysis on the equivalent circuit, excellent agreements between measured data and simulation results were obtained without any optimization steps in the frequency range up to 18 GHz, as well as the overall bias range.

Keywords

MIS devices; equivalent circuits; semiconductor device models; varactors; 18 GHz; RF model; Z-parameter analysis; accumulation-mode MOS varactor; circuit simulation; equivalent circuit; integrated passive device; lumped element topology; parameter extraction; Analytical models; Circuit simulation; Circuit topology; Data mining; Equations; Equivalent circuits; Frequency measurement; Integrated circuit measurements; Radio frequency; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212543

Filename

1212543