Title : 
X-parameter-based frequency doubler design
         
        
            Author : 
Jialin Cai ; Brazil, Thomas J.
         
        
            Author_Institution : 
Sch. of Electr., Electron. & Commun. Eng., Univ. Coll. Dublin, Dublin, Ireland
         
        
        
        
        
            Abstract : 
As a kind of superset of S-parameters, X-parameters are becoming increasingly popular in non-linear device simulation and measurement. Due to their good accuracy and convenient extraction procedures, X-parameter-based transistor device models have so far been mainly used in power amplifiers design. They have been limited to this kind of design up to now because the X-parameter models extracted are only suitable for fundamental frequency circuit design. In this paper, a new extraction method is described to allow the extracted model to be used to designing a frequency doubler, and verification through simulation results is presented.
         
        
            Keywords : 
S-parameters; frequency multipliers; microwave power amplifiers; microwave transistors; network synthesis; S-parameters; X-parameter-based frequency doubler design; X-parameter-based transistor device models; convenient extraction procedures; fundamental frequency circuit design; nonlinear device measurement; nonlinear device simulation; power amplifiers design; Accuracy; Harmonic analysis; Integrated circuit modeling; Load modeling; Simulation; Solid modeling; Transistors; X-parameter model; frequency doubler; load-pull; transistor modeling;
         
        
        
        
            Conference_Titel : 
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
         
        
            Conference_Location : 
Amsterdam
         
        
            Print_ISBN : 
978-1-4673-2302-4
         
        
            Electronic_ISBN : 
978-2-87487-026-2