A 25 GHz wide-tuning VCO RFIC implemented in 0.13 um SiGe BiCMOS technology

Author

Kakani, Vasanth ; Jin, Yuehai ; Dai, Fa Foster

Author_Institution

Dept. of Electr. & Comput. Eng., Auburn Univ., Auburn, AL, USA

fYear

2010

Firstpage

5

Lastpage

8

Abstract

This paper presents the design and measurement of an integrated millimeter wave wideband voltage controlled oscillator (VCO). This VCO employs the on-chip transmission lines and hyper-abrupt junction varactors to form high Q resonator. The VCO RFIC was implemented in a 0.13um 200GHz ft SiGe hetero-junction bipolar transistor (HBT) BiCMOS technology. The VCO oscillation frequency is around 25GHz, targeting at the ultra wideband (UWB) and short range radar applications. The VCO phase noise was measured around -82.5dBc/Hz at 500 KHz frequency offset. It has a wide tuning range from 23.8GHz to 26.3GHz. The core of VCO circuit consumes 10mA current from a 2.2V power supply and occupies 0.56×0.205mm² area.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; circuit tuning; heterojunction bipolar transistors; integrated circuit design; phase noise; radiofrequency integrated circuits; voltage-controlled oscillators; BiCMOS technology; HBT; SiGe; VCO circuit; VCO phase noise; current 10 mA; frequency 200 GHz; frequency 23.8 GHz to 26.3 GHz; frequency 25 GHz; frequency 500 kHz; hetero-junction bipolar transistor; high Q resonator; hyper-abrupt junction varactors; millimeter wave wideband voltage controlled oscillator; on-chip transmission lines; short range radar; size 0.13 mum; ultra wideband radar; voltage 2.2 V; wide-tuning VCO RFIC; BiCMOS; HBT; SiGe; phase noise; voltage controlled oscillator (VCO);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5668026

Filename

5668026