Millimeter-wave power amplifier module using redistribution layer technology

Author

Sato, Mitsuhisa ; Ishizuki, Yoshikatsu ; Sasaki, Seishi ; Matsumura, Hiroshi ; Suzuki, Takumi ; Tani, Motoaki

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2012

Firstpage

818

Lastpage

821

Abstract

This paper presents a 77-GHz band high-power CMOS amplifier module. In an effort to integrate MMIC with low-loss passive circuits, multi-layered redistribution layer (RDL) technology has been installed. Passive circuits made using RDL technology and 65-nm CMOS circuits are enabling breakthrough approaches for millimeter wave applications. Low-loss passive circuits using RDL technology was fabricated. Moreover, we developed an amplifier module combining four identical CMOS power amplifiers with RDL Wilkinson power combiner to increase the output power. The saturation power of the amplifier module exhibits 15 dBm, which is 6 dB higher than that of the single PA.

Keywords

CMOS integrated circuits; MMIC power amplifiers; millimetre wave integrated circuits; millimetre wave power amplifiers; passive networks; CMOS circuits; MMIC integration; RDL Wilkinson power combiner; band high-power CMOS amplifier module; frequency 77 GHz; identical CMOS power amplifiers; low-loss passive circuits; millimeter-wave power amplifier module; multilayered RDL technology; multilayered redistribution layer technology; redistribution layer technology; saturation power; single PA; size 65 nm; CMOS integrated circuits; CMOS technology; Passive circuits; Power amplifiers; Power generation; Semiconductor device measurement; Transmission line measurements; CMOS; Power amplifier; RDL; WLP; Wilkinson combiner;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483926