86 GHz static and 110 GHz dynamic frequency dividers in SiGe bipolar technology

Author

Knapp, H. ; Wurzer, M. ; Meister, T.F. ; Aufinger, K. ; Bock, J. ; Boguth, S. ; Schafer, H.

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

2

fYear

2003

Firstpage

1067

Abstract

We present static and dynamic frequency dividers manufactured in a 200 GHz f/sub T/ SiGe bipolar technology. The static divider has a divide ratio of 32 and operates up to 86.2 GHz. The dynamic divider is based on regenerative frequency division and has a divide ratio of two. It operates up to 110 GHz (limited by the measurement equipment). The power consumption of the static and dynamic frequency dividers is 900 mW and 310 mW, respectively.

Keywords

Ge-Si alloys; bipolar MIMIC; frequency dividers; high-speed integrated circuits; integrated circuit design; millimetre wave frequency convertors; semiconductor materials; 110 GHz; 110 GHz dynamic frequency dividers; 200 GHz; 310 mW; 86 GHz; 86 GHz static frequency dividers; 900 mW; SiGe; SiGe bipolar technology; divide ratio; high-speed circuit design; power consumption; regenerative frequency division; Circuit synthesis; Clocks; Energy consumption; Flip-flops; Frequency conversion; Germanium silicon alloys; Latches; Master-slave; Mixers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212553

Filename

1212553