• DocumentCode
    1647499
  • Title

    A tunable, SiGe X-band image reject mixer

  • Author

    Saha, Prabir K. ; Cressler, John D.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2010
  • Firstpage
    196
  • Lastpage
    199
  • Abstract
    A SiGe 8-12 GHz image reject mixer with tunable performance is presented. Control voltages and currents allow the mixer performance to be “healed”, nullifying effects of process variation or environmental changes. Conversion gain greater than 10 dB and output P1dB greater than 0 dBm were obtained in measurement. An image rejection ratio (IRR) of greater than 40 dB was obtained after tuning, a 25 dB improvement over pre-tuned results. The mixer was fabricated in a 150 GHz peak fT SiGe BiCMOS process and consumes 200 mA of current operating on a 4 V rail.
  • Keywords
    Ge-Si alloys; mixers (circuits); X-band image reject mixer; control voltages; conversion gain; current 200 mA; frequency 8 GHz to 12 GHz; image rejection ratio; nullifying effects; tunable performance; Current measurement; Gain; Linearity; Mixers; Radio frequency; Silicon germanium; Voltage control; Image reject mixer; SiGe; self-healing circuits; tunable mixer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
  • Conference_Location
    Austin, TX
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4244-8578-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.2010.5668039
  • Filename
    5668039
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1647499