Title :
A tunable, SiGe X-band image reject mixer
Author :
Saha, Prabir K. ; Cressler, John D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A SiGe 8-12 GHz image reject mixer with tunable performance is presented. Control voltages and currents allow the mixer performance to be “healed”, nullifying effects of process variation or environmental changes. Conversion gain greater than 10 dB and output P1dB greater than 0 dBm were obtained in measurement. An image rejection ratio (IRR) of greater than 40 dB was obtained after tuning, a 25 dB improvement over pre-tuned results. The mixer was fabricated in a 150 GHz peak fT SiGe BiCMOS process and consumes 200 mA of current operating on a 4 V rail.
Keywords :
Ge-Si alloys; mixers (circuits); X-band image reject mixer; control voltages; conversion gain; current 200 mA; frequency 8 GHz to 12 GHz; image rejection ratio; nullifying effects; tunable performance; Current measurement; Gain; Linearity; Mixers; Radio frequency; Silicon germanium; Voltage control; Image reject mixer; SiGe; self-healing circuits; tunable mixer;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5668039
