A SiGe:C BiCMOS LNA for 94GHz band applications

Author

Severino, R.R. ; Taris, T. ; Deval, Y. ; Belot, D. ; Begueret, J.B.

Author_Institution

IMS Lab., Univ. of Bordeaux, Talence, France

fYear

2010

Firstpage

188

Lastpage

191

Abstract

A new low noise amplifier (LNA) dedicated to 94 GHz band has been implemented in a 130 nm BiCMOS technology intended for millimeter waves applications. The circuit is a single stage cascode amplifier utilizing transmission lines and MIM capacitors for input, output and inter-stage matching. On chip measurements show a 9.08 dB maximum peak of power gain at 94.7 GHz and a 1 dB compression point at -14.9 dBm of input power. The noise figure is 8.6 dB and the power consumption is 13 mW.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; MIM devices; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; BiCMOS LNA; LNA; MIM capacitors; SiGe:C; frequency 94 GHz; gain 9.08 dB; inter-stage matching; low noise amplifier; millimeter waves; noise figure 8.6 dB; power 13 mW; power consumption; single stage cascode amplifier; size 130 nm; transmission lines; BiCMOS integrated circuits; Impedance matching; Integrated circuit modeling; Layout; Millimeter wave technology; Transistors; Transmission line measurements; 94GHz; Bipolar/BiCMOS integrated circuits; imaging; low noise amplifier (LNA); millimeter-waves (mm-Waves);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5668051

Filename

5668051