DocumentCode
1647907
Title
Monolithic multi-wavelength colliding pulse mode-locked semiconductor laser
Author
Songtao Liu ; Mengdie Sun ; Huitao Wang ; Fei Guo ; Ruikang Zhang ; Dan Lu ; Chen Ji
Author_Institution
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
fYear
2015
Firstpage
1
Lastpage
3
Abstract
We present for the first time a monolithic multi-wavelength colliding pulse mode-locked semiconductor laser diode working in a passive 10th harmonic mode-locking operation state based on InP/InGaAsP material system. Nearly transform-limited 12-ps sech2-pulses with a repetition rate of 28.1 GHz are obtained.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser mode locking; optical harmonic generation; optical pulse generation; semiconductor lasers; InP-InGaAsP; frequency 28.1 GHz; monolithic multiwavelength collision; nearly transform-limited 12-ps sech2-pulses; passive 10th harmonic mode-locking operation; pulse mode-locking; semiconductor laser; Integrated optics; Optical device fabrication; Optical fibers; Optical pulses; Semiconductor optical amplifiers; Active-passive integration; Colliding pulse mode-locked (CPM) lasers; Integrated optics devices; Multi-wavelength semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications and Networks (ICOCN), 2015 14th International Conference on
Conference_Location
Nanjing
Type
conf
DOI
10.1109/ICOCN.2015.7203704
Filename
7203704
Link To Document