Narrow linewidth distributed-feedback laser with low relative intensity noise

Author

Jianguo Liu ; Sunlong Wang ; Wei Chen ; Jin-Jin Guo ; Wenting Wang ; Xin Zhong ; Tao Zhou ; Ninghua Zhu

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

We fabricated a low relative intensity noise (RIN) narrow linewidth semiconductor laser module. The structure of the monolithic integrated laser chip is asymmetric phase-shifted DFB structure with the length of 1000-μm. The maximum output power reaches 26mW when the driving current is 200mA. The narrowest linewidth reaches about 35 kHz with the driving current at 150mA, and the RIN is lower than -165 dB/Hz for the frequency offset from 0.1GHz to 20 GHz in the whole current tuning range from 40 mA to 200 mA. This laser module has wide application prospects for optical sensing, digital coherent and analog communication areas.

Keywords

distributed feedback lasers; integrated optics; laser noise; semiconductor lasers; RIN; analog communication; asymmetric phase-shifted DFB structure; current 40 mA to 200 mA; digital coherent communication; driving current; frequency 0.1 GHz to 20 GHz; low relative intensity noise; monolithic integrated laser chip; narrow linewidth distributed-feedback laser; optical sensing; output power; power 26 mW; semiconductor laser module; Diode lasers; Lenses; Noise; Optical feedback; Optical fibers; Optical reflection; Narrow linewidth laser; relative intensity noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications and Networks (ICOCN), 2015 14th International Conference on

Conference_Location

Nanjing

Type

conf

DOI

10.1109/ICOCN.2015.7203706

Filename

7203706