• DocumentCode
    1648099
  • Title

    Technological Scaling and Impact on UWB Configurable RF Signal Source

  • Author

    Rohde, U.L. ; Poddar, A.K.

  • Author_Institution
    Fellow, IEEE, Synergy Microwave Corporation, 201 McLean Boulevard, Paterson, NJ 07504, USA
  • fYear
    2006
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The coexistence of second and third generation wireless system requires multi-mode, multi-band and multi-standard mobile communication systems, therefore, requiring a configurable RF signal source (VCO) that may replace several narrow band VCO modules by a single low noise ultrawideband (UWB) adaptable RF signal source. The performance of the wireless communication systems strongly depends on the speed of devices, and technological scaling has driven this momentum towards achieving faster speed and high level of integration. This paper investigates the impact of device scaling on phase noise of the UWB (2-8GHz) configurable coupled N-Push voltage controlled oscillator (VCO) in SiGe HBT, which has recently emerged as a strong contender for RF and mixed signal applications.
  • Keywords
    Germanium silicon alloys; Mobile communication; Narrowband; Noise generators; Phase noise; Signal generators; Silicon germanium; Ultra wideband technology; Voltage-controlled oscillators; Wireless communication; N-Push; SiGe HBTs; UWB; VCO;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sarnoff Symposium, 2006 IEEE
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    978-1-4244-0002-7
  • Electronic_ISBN
    978-1-4244-0003-4
  • Type

    conf

  • DOI
    10.1109/SARNOF.2006.4534730
  • Filename
    4534730