A 125GHz LC-VCO in a SiGe:C Technology dedicated to mmW applications

Author

Toupé, R. ; Deval, Y. ; Bégueret, J. -B

Author_Institution

IMS Lab., Univ. of Bordeaux, Bordeaux, France

fYear

2010

Firstpage

1

Lastpage

4

Abstract

This paper presents a 125GHz LC-VCO dedicated to mmW applications. It has been designed, within the framework of the European project DOTFIVE, with a new B3T bipolar technology developed by STMicroelectronics, in which NPN transistors reach a f_t and f_max of 260GHz and 340GHz respectively. Under a nominal power supply of 1.8V, the 125GHz VCO dissipates 54mA (with output buffers) for a measured phase noise of -75dBc/Hz at 1MHz offset from the 125GHz carrier and achieves a tuning range of 2GHz with a size of 0.25 mm².

Keywords

Ge-Si alloys; bipolar transistors; carbon; millimetre wave oscillators; phase noise; voltage-controlled oscillators; B3T bipolar technology; European project DOTFIVE; LC-VCO; NPN transistors; STMicroelectronics; SiGe:C; current 54 mA; frequency 125 EHz; mmW applications; phase noise; voltage 1.8 V; Microstrip; Phase noise; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators; Millimeter-wave integrated circuits; SiGe Bipolar technology; phase noise; voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5668065

Filename

5668065