DocumentCode
1648203
Title
Characterization of low-k silica films by Raman spectroscopy
Author
Alam, A. H M Zahiml
Author_Institution
Dept. of ECE, International Islamic Univ., Kuala Lumpur, Malaysia
fYear
2004
Firstpage
694
Lastpage
697
Abstract
Silica films with low dielectric constant were prepared by means of a sol-gel spin-coating method with and without incorporating pores in the films. Non-destructive Raman spectroscopy studies allow a partial characterization of the low-k silica films, in terms of void presence. The origin of the deferences between the contributions to the pores to the films produced with different preparation conditions is discussed.
Keywords
Raman spectroscopy; dielectric thin films; sol-gel processing; spin coating; dielectric constant; low-k silica films; nondestructive Raman spectroscopy; preparation conditions; sol-gel spin-coating method; Annealing; Conductivity; Delay effects; Dielectric materials; Infrared spectra; Metallization; Raman scattering; Silicon compounds; Spectroscopy; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Multitopic Conference, 2004. Proceedings of INMIC 2004. 8th International
Print_ISBN
0-7803-8680-9
Type
conf
DOI
10.1109/INMIC.2004.1492979
Filename
1492979
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