DocumentCode
1648227
Title
Output power and efficiency in full-bridged MOSFET power inverter operating at shortwave frequency
Author
Ikeda, Hiroaki ; Suzuki, Taiju ; Hayeiwa, Kazuhisa ; Yoshida, Hirofumi ; Shinohara, Shigenobu
Author_Institution
Shizuoka Univ., Hamamatsu, Japan
fYear
1990
Firstpage
1143
Abstract
Power loss factors in designing the full-bridge MOSFET power inverter operating at shortwave frequencies have been analyzed to improve the power conversion efficiency at a specified output power. Despite the difficulty in parallel connection of the MOSFETs in each MOSFET array, the parallel connection of the MOSFETs on the planar circuit board enhanced the output power to 500 W with a power conversion efficiency of nearly 80% at as high as 3.7 MHz. The experimental device, which had an output power of 500 W, operated reliably without any extraordinary temperature rise
Keywords
insulated gate field effect transistors; invertors; losses; power transistors; 3.7 MHz; 500 W; MOSFET; SW; design; efficiency; inverter; output power; parallel connection; planar circuit board; power losses; power transistors; shortwave frequency; Delay effects; Delay lines; Frequency conversion; Inverters; MOSFET circuits; Power MOSFET; Power conversion; Power generation; Printed circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location
Pacific Grove, CA
Print_ISBN
0-87942-600-4
Type
conf
DOI
10.1109/IECON.1990.149298
Filename
149298
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