Title :
Modeling and measurements of novel high k monolithic transformers
Author :
Aly, A.H. ; Elsharawy, B.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
This paper presents modeling and measurements of a novel monolithic transformer with high coupling k and quality factor Q characteristics. The present transformer utilizes a Z-shaped multilayer metalization to increase k without sacrificing Q. The new transformer has been fabricated using Motorola 0.18 micron copper process. A simple 2-port lumped circuit model is used to model the new design. Experimental data shows a good agreement with predicted data obtained from an HFSS software simulator. An increase of about 10% in mutual coupling and 15% in Q has been achieved. For a modest increase in k of about 5%, Q can be increased by up to 20%.
Keywords :
MMIC; Q-factor; circuit simulation; equivalent circuits; integrated circuit metallisation; transformers; two-port networks; 0.18 micron; HFSS software simulator; Z-shaped multilayer metalization; high k monolithic transformers; mutual coupling; quality factor; two-port lumped circuit model; Circuit simulation; Copper; Coupling circuits; High K dielectric materials; High-K gate dielectrics; Nonhomogeneous media; Predictive models; Q factor; Q measurement; Transformers;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212595
