MSW resonators on micromachined silicon membrane

Author

Sajin, G. ; Marcelli, R. ; Craciunoiu, F. ; Cismaru, A.

Author_Institution

Nat. Res. & Dev. Inst. for Microtechnologies, Bucharest, Romania

Volume

2

fYear

2003

Firstpage

1271

Abstract

Tunable band-stop and band-pass straight edge resonators (SER) on silicon membrane were obtained and characterized. S-parameters have been measured at different DC magnetic biasing fields showing a frequency tunability domain between 3 GHz and 9.5 GHz ca for band stop resonators and between 2 GHz and 7.5 GHz ca. for band pass resonators. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. The utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices in microwave circuit with micromachined structures.

Keywords

S-parameters; magnetic microwave devices; magnetostatic wave devices; membranes; micromachining; micromechanical resonators; 2 to 7.5 GHz; 3 to 9.5 GHz; S-parameters; Si; band-pass resonator; band-stop resonator; frequency tunability; magnetic field; magnetostatic wave resonator; micromachined silicon membrane; microstrip transducer; microwave circuit; straight edge resonator; Biomembranes; Frequency measurement; Magnetic domains; Magnetic field measurement; Magnetostatic waves; Microstrip; Scattering parameters; Silicon; Transducers; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212601

Filename

1212601