Characterization and model of high quality factor and broadband integrated inductor on Si-substrate

Author

Yang, M.T. ; Yeh, T.J. ; Lin, W.C. ; Hsu, H.M. ; Ho, P.P.C. ; Wang, Y.J. ; Chia, Y.T. ; Tang, D.D.L.

Author_Institution

Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan

Volume

2

fYear

2003

Firstpage

1283

Abstract

Proton bombardment has been used to boost the on-chip inductor quality factor and to also improve the frequency response. In this paper we demonstrated these advantages using the 0.13/spl mu/m and 0.18/spl mu/m RF CMOS processes. Based on the model, we evaluated how the performance improved using bombardment technology. A simultaneously impressive increase both in the peak Q-value and the optimal frequency have been evidenced due to its significantly reduced substrate parasitic effect as a result of higher substrate resistivity. This can be considered as a solution to integrate inductor on a Si substrate.

Keywords

CMOS integrated circuits; Q-factor; inductors; proton effects; radiofrequency integrated circuits; 0.13 micron; 0.18 micron; RF CMOS process; Si; Si substrate; broadband integrated inductor; frequency response; parasitic effect; proton bombardment; quality factor; CMOS process; CMOS technology; Conductivity; Frequency response; Inductors; Protons; Q factor; Radio frequency; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212604

Filename

1212604