Title :
C-band linear resistive wide bandgap FET mixers
Author :
Andersson, K. ; Desmaris, V. ; Eriksson, J. ; Rorsman, N. ; Zirath, H.
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
In this paper the performance of two C-band resistive FET mixers are presented and compared. The first mixer uses a SiC-MESFET as a mixing element and the second uses an AlGaN/GaN-HEMT. The mixers have a minimum conversion loss of 7.8 dB and 7.3 dB respectively. The maximum third-order input intercept points are 30 dBm and 36 dBm respectively; for LO drives of 23 dBm and 30 dBm.
Keywords :
HEMT circuits; III-V semiconductors; MESFET circuits; aluminium compounds; gallium compounds; mixers (circuits); silicon compounds; wide band gap semiconductors; 7.3 dB; 7.8 dB; AlGaN-GaN; AlGaN/GaN HEMT; C-band linear resistive FET mixer; LO drive; SiC; SiC MESFET; conversion loss; third-order input intercept point; wide bandgap semiconductor device; Density measurement; Dielectric substrates; Frequency measurement; Gallium nitride; MESFETs; Microwave FETs; Ohmic contacts; Photonic band gap; Power measurement; Schottky diodes;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212609
