Title :
Generation and detection of Q-switched pulses from two-section semiconductor lasers
Author :
Marsh, John H. ; Barrow, David A. ; Laughton, Frances R. ; Portnoi, Efim L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
11/3/1993 12:00:00 AM
Abstract :
Semiconductor devices can be used to generate and characterise ps pulses. A two-section semiconductor laser has been described which generates pulses of 20-30 ps duration at up to 16 GHz with a peak power of ~0.5 W. A two-photon absorption autocorrelator has been demonstrated, consisting of a reverse-biased p-i-n GaAs/AlGaAs waveguide. By measuring the two-photon generated photocurrent as a function of the time delay between the pulses in the waveguide, pulsewidth measurements of both a Nd3+:YAG and a InP/InGaAs semiconductor laser have been made
Keywords :
Q-switching; high-speed optical techniques; optical correlation; optical saturable absorption; semiconductor lasers; two-photon processes; 0.5 W; 16 GHz; 20 to 30 ps; GaAs-AlGaAs waveguide; III-V semiconductors; InP-InGaAs laser; Nd3+:YAG laser; Q-switched pulses; YAG:Nd3+ laser; YAl5O12:Nd; picosecond optical pulse generation; pulsewidth measurements; quantum well lasers; reverse biased p-i-n waveguide; saturable absorbers; self-Q-switching; time delay; two-photon absorption autocorrelator; two-photon generated photocurrent; two-section semiconductor lasers;
Conference_Titel :
Ultra-Short Optical Pulses, IEE Colloquium on
Conference_Location :
London
