Title :
Monolithic integration of InSb Hall-effect devices with Si LSI on Si substrate
Author :
Kunimi, Y. ; Sakurai, A. ; Akiyama, S. ; Fujita, H. ; Shibata, Y. ; Nagakura, K. ; Noma, Y. ; Yamamoto, T. ; Yamaha, Y.
Author_Institution :
Magn. Sensors Process Technol. & Dev. Dept., Asahi-KASEI Microdevices Corp., Shizuoka, Japan
Abstract :
This paper describes for the first time, monolithic integration of high quality InSb Hall device with Si-LSI. Hall device was connected to Si-LSI with metal and controlled by Si-LSI. Temperature drift of output voltage from Hall device could be made within 2% during wide temperature range from -40 to 125 degree C.
Keywords :
Hall effect devices; indium compounds; large scale integration; monolithic integrated circuits; silicon; Hall-effect devices; InSb; LSI; Si; monolithic Integration; output voltage; temperature -40 degC to 125 degC; temperature drift; Hall effect devices; Large scale integration; Monolithic integrated circuits;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424208
