Title :
Body-biased complementary logic implemented using AlN piezoelectric MEMS switches
Author :
Sinha, Nipun ; Jones, Timothy S. ; Guo, Zhijun ; Piazza, Gianluca
Author_Institution :
Dept. of Mech. Eng. & Appl. Mech., Univ. of Pennsylvania, Philadelphia, PA, USA
Abstract :
This paper reports on the first implementation of low voltage complementary logic (¿ 1.5 V) by using body-biased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an n-type and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing.
Keywords :
III-V semiconductors; aluminium compounds; logic devices; microswitches; piezoelectric devices; wide band gap semiconductors; AlN; body biased complementary logic; low voltage complementary logic; opposite body bias; piezoelectric MEMS switches; Air gaps; CMOS logic circuits; Inverters; Logic devices; Low voltage; MOSFETs; Micromechanical devices; Microswitches; Power semiconductor switches; Threshold voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424215
