Title :
BEOL embedded RF-MEMS switch for mm-wave applications
Author :
Kaynak, M. ; Ehwald, K.E. ; Drews, J. ; Scholz, R. ; Korndörfer, F. ; Knoll, D. ; Tillack, B. ; Barth, R. ; Birkholz, M. ; Schulz, K. ; Sun, Y.M. ; Wolansky, D. ; Leidich, S. ; Kurth, S. ; Gurbuz, Y.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
We demonstrate for the first time the embedded integration of a Radio Frequency Microelectromechanical Systems (RF-MEMS) capacitive switch for mm-wave integrated circuits in a BiCMOS Back-end-of-line (BEOL). The switch shows state-of-the-art performance parameters. The ¿off¿ to ¿on¿ capacitance ratio is 1:10 providing excellent isolation in the mm-wave frequency range. Insertion loss and isolation are found to fall below 1.65 dB and to exceed 15 dB, respectively, in the frequency range of 60 GHz to 110 GHz. Feasibility of switch integration into single chip RF designs is demonstrated for a dual-band voltage controlled oscillator (VCO). No performance degradation was observed after ten billion hot-switching cycles.
Keywords :
microswitches; millimetre wave integrated circuits; BiCMOS back-end-of-line; RF MEMS switch embedded integration; capacitance ratio; dual band voltage controlled oscillator; frequency 60 GHz to 110 GHz; hot switching cycles; insertion loss; mm-wave frequency range; mm-wave integrated circuits; radio frequency microelectromechanical system capacitive switch; BiCMOS integrated circuits; Capacitance; Dual band; Insertion loss; Radio frequency; Radiofrequency integrated circuits; Radiofrequency microelectromechanical systems; Switches; Switching circuits; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424219
