Title :
14.7 dB/mm TE mode nonreciprocal propagation in an InGaAsP/InP active waveguide optical isolator
Author :
Shimizu, Hiromasa ; Nakano, Yoshiaki
Author_Institution :
Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Japan
Abstract :
We have fabricated TE mode InGaAsP/InP active waveguide optical isolators demonstrating 14.7dB/mm TE mode isolation ratio with reduced insertion loss at the wavelength of 1550nm for monolithically integratable optical isolators.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical isolators; optical waveguide components; semiconductor device measurement; semiconductor optical amplifiers; 1550 nm; InGaAsP-InP; InGaAsP/InP active waveguide optical isolator; SOA; TE mode isolation ratio; TE mode nonreciprocal propagation; device semiconductor optical amplifier waveguide; insertion loss; monolithically integratable optical isolators; Indium phosphide; Integrated optics; Isolators; Optical devices; Optical losses; Optical propagation; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission; Tellurium;
Conference_Titel :
Optical Fiber Communication Conference, 2005. Technical Digest. OFC/NFOEC
Print_ISBN :
1-55752-783-0
DOI :
10.1109/OFC.2005.193196
